MOSFET N-CH 600V 29A HDSOP-10 IPDD60R080G7XTMA1
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Description:
MOSFET N-CH 600V 29A HDSOP-10
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPDD60R080G7XTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39457,Price reference "real-time change" China/Hongkong。 IPDD60R080G7XTMA1 package/specs, Download IPDD60R080G7XTMA1、Datasheet。