SILICON CARBIDE MOSFET PG-TO263- IMBG65R057M1HXTMA1
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Description:
SILICON CARBIDE MOSFET PG-TO263-
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IMBG65R057M1HXTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49335,Price reference "real-time change" China/Hongkong。 IMBG65R057M1HXTMA1 package/specs, Download IMBG65R057M1HXTMA1、Datasheet。