SIC DISCRETE IMZA120R040M1HXKSA1
The pictures are for reference only
Model:
IMZA120R040M1HXKSA1
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IMZA120R040M1HXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22012,Price reference "real-time change" China/Hongkong。 IMZA120R040M1HXKSA1 package/specs, Download IMZA120R040M1HXKSA1、Datasheet。