HIGH POWER_NEW PG-HDSOP-22 IPDQ60R010S7XTMA1
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Description:
HIGH POWER_NEW PG-HDSOP-22
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPDQ60R010S7XTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68404,Price reference "real-time change" China/Hongkong。 IPDQ60R010S7XTMA1 package/specs, Download IPDQ60R010S7XTMA1、Datasheet。