IMW120R014M1HXKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IMW120R014M1HXKSA1

Description:

SIC DISCRETE

Stock:

19303

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$8.62

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

127A(Tc)

Drain source voltage (Vdss)

1200 V

Drive voltage (maximum RdsOn, minimum RdsOn)

15V,18V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

110 nC @ 18 V

Input capacitance at different Vds (Ciss) (maximum)

4580 nF @ 25 V

On resistance (maximum) for different Ids and Vgs

18.4 mΩ @ 54.3A,18V

Power dissipation (maximum)

455W(Tc)

Vgs (max)

+20V,-5V

Vgs (th) (maximum) for different Ids

5.2V @ 23.4mA

packing

pipe

series

CoolSiC™

technology

SiCFET(silicon carbide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO247-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载IMW120R014M1HXKSA1.pdf

IMW120R014M1HXKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19303,Price reference "real-time change" China/Hongkong。 IMW120R014M1HXKSA1 package/specs, Download IMW120R014M1HXKSA1、Datasheet。