MOSFET P-CH 60V SOT223 ISP26DP06NMSATMA1
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Description:
MOSFET P-CH 60V SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ISP26DP06NMSATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory61009,Price reference "real-time change" China/Hongkong。 ISP26DP06NMSATMA1 package/specs, Download ISP26DP06NMSATMA1、Datasheet。