MOSFET N-CHANNEL 750V 4A SOT223 IPN70R2K1CEATMA1
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Description:
MOSFET N-CHANNEL 750V 4A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPN70R2K1CEATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory53279,Price reference "real-time change" China/Hongkong。 IPN70R2K1CEATMA1 package/specs, Download IPN70R2K1CEATMA1、Datasheet。