MOSFET P-CH 60V 1.9A SOT223-4 ISP25DP06NMXTSA1
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Description:
MOSFET P-CH 60V 1.9A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ISP25DP06NMXTSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory81037,Price reference "real-time change" China/Hongkong。 ISP25DP06NMXTSA1 package/specs, Download ISP25DP06NMXTSA1、Datasheet。