IPSA70R1K4P7SAKMA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPSA70R1K4P7SAKMA1

Description:

MOSFET N-CH 700V 4A TO251-3

Stock:

8416

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.07

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Parameters

Current at 25 ° C - continuous drain (Id)

4A(Tc)

Drain source voltage (Vdss)

700 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

4.7 nC @ 400 V

Input capacitance at different Vds (Ciss) (maximum)

158 pF @ 400 V

On resistance (maximum) for different Ids and Vgs

1.4 Ω@ 700mA,10V

Power dissipation (maximum)

22.7W(Tc)

Vgs (max)

±16V

Vgs (th) (maximum) for different Ids

3.5V @ 40µA

packing

bulk,pipe

series

CoolMOS™ P7

technology

MOSFET(Metal oxide)

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TO251-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载IPSA70R1K4P7SAKMA1.pdf

IPSA70R1K4P7SAKMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8416,Price reference "real-time change" China/Hongkong。 IPSA70R1K4P7SAKMA1 package/specs, Download IPSA70R1K4P7SAKMA1、Datasheet。