MOSFET P-CH 60V 4.3A TO252-3 IPD40DP06NMATMA1
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Description:
MOSFET P-CH 60V 4.3A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD40DP06NMATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97933,Price reference "real-time change" China/Hongkong。 IPD40DP06NMATMA1 package/specs, Download IPD40DP06NMATMA1、Datasheet。