MOSFET P-CH 60V SOT223 ISP13DP06NMSATMA1
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Description:
MOSFET P-CH 60V SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ISP13DP06NMSATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19857,Price reference "real-time change" China/Hongkong。 ISP13DP06NMSATMA1 package/specs, Download ISP13DP06NMSATMA1、Datasheet。