MOSFET N-CH 650V 7.2A TO251-3 IPS65R1K0CEAKMA2
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Description:
MOSFET N-CH 650V 7.2A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPS65R1K0CEAKMA2(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58691,Price reference "real-time change" China/Hongkong。 IPS65R1K0CEAKMA2 package/specs, Download IPS65R1K0CEAKMA2、Datasheet。