MOSFET N-CH 800V 1.9A TO251-3 IPU80R3K3P7AKMA1
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Description:
MOSFET N-CH 800V 1.9A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPU80R3K3P7AKMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1031,Price reference "real-time change" China/Hongkong。 IPU80R3K3P7AKMA1 package/specs, Download IPU80R3K3P7AKMA1、Datasheet。