MOSFET N-CH 100V 18A TSDSON-8-32 IAUZ18N10S5L420ATMA1
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Model:
IAUZ18N10S5L420ATMA1
Description:
MOSFET N-CH 100V 18A TSDSON-8-32
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IAUZ18N10S5L420ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory40376,Price reference "real-time change" China/Hongkong。 IAUZ18N10S5L420ATMA1 package/specs, Download IAUZ18N10S5L420ATMA1、Datasheet。