MOSFET_(75V 120V( PG-TDSON-8 IAUC26N10S5L245ATMA1
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Model:
IAUC26N10S5L245ATMA1
Description:
MOSFET_(75V 120V( PG-TDSON-8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IAUC26N10S5L245ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63762,Price reference "real-time change" China/Hongkong。 IAUC26N10S5L245ATMA1 package/specs, Download IAUC26N10S5L245ATMA1、Datasheet。