MOSFET N-CH 40V 50A TO252-3 IPD50N04S309ATMA1
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Description:
MOSFET N-CH 40V 50A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPD50N04S309ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29227,Price reference "real-time change" China/Hongkong。 IPD50N04S309ATMA1 package/specs, Download IPD50N04S309ATMA1、Datasheet。