MOSFET N-CH 650V 3.9A TO252-3 IPD65R950CFDATMA1
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Description:
MOSFET N-CH 650V 3.9A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPD65R950CFDATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83042,Price reference "real-time change" China/Hongkong。 IPD65R950CFDATMA1 package/specs, Download IPD65R950CFDATMA1、Datasheet。