MOSFET N-CH 80V 13A/50A 2WDSON BSB104N08NP3GXUSA1
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Description:
MOSFET N-CH 80V 13A/50A 2WDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
BSB104N08NP3GXUSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96375,Price reference "real-time change" China/Hongkong。 BSB104N08NP3GXUSA1 package/specs, Download BSB104N08NP3GXUSA1、Datasheet。