MOSFET N-CH 650V 4.2A THIN-PAK IPL65R1K0C6SATMA1
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Description:
MOSFET N-CH 650V 4.2A THIN-PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPL65R1K0C6SATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory57780,Price reference "real-time change" China/Hongkong。 IPL65R1K0C6SATMA1 package/specs, Download IPL65R1K0C6SATMA1、Datasheet。