MOSFET N-CH 800V 8A TO251-3 IPS80R600P7AKMA1
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Description:
MOSFET N-CH 800V 8A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPS80R600P7AKMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89228,Price reference "real-time change" China/Hongkong。 IPS80R600P7AKMA1 package/specs, Download IPS80R600P7AKMA1、Datasheet。