MOSFET N-CH 30V 22A TO263-3 IPB22N03S4L15ATMA1
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Description:
MOSFET N-CH 30V 22A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB22N03S4L15ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48505,Price reference "real-time change" China/Hongkong。 IPB22N03S4L15ATMA1 package/specs, Download IPB22N03S4L15ATMA1、Datasheet。