MOSFET N-CH 55V 80A TO263-3 IPB80N06S209ATMA2
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Description:
MOSFET N-CH 55V 80A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB80N06S209ATMA2(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35111,Price reference "real-time change" China/Hongkong。 IPB80N06S209ATMA2 package/specs, Download IPB80N06S209ATMA2、Datasheet。