LOW POWER_LEGACY IPD50R399CPATMA1
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Description:
LOW POWER_LEGACY
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPD50R399CPATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78196,Price reference "real-time change" China/Hongkong。 IPD50R399CPATMA1 package/specs, Download IPD50R399CPATMA1、Datasheet。