MOSFET N-CH 100V 9.4A/63A TDSON BSC159N10LSFGATMA1
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Description:
MOSFET N-CH 100V 9.4A/63A TDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
BSC159N10LSFGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory81680,Price reference "real-time change" China/Hongkong。 BSC159N10LSFGATMA1 package/specs, Download BSC159N10LSFGATMA1、Datasheet。