MOSFET N-CH 60V 120A D2PAK IPB029N06N3GE8187ATMA1
The pictures are for reference only
Model:
IPB029N06N3GE8187ATMA1
Description:
MOSFET N-CH 60V 120A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB029N06N3GE8187ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30662,Price reference "real-time change" China/Hongkong。 IPB029N06N3GE8187ATMA1 package/specs, Download IPB029N06N3GE8187ATMA1、Datasheet。