MOSFET N-CH 30V 180A TO263-7 IPB180N03S4L01ATMA1
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Model:
IPB180N03S4L01ATMA1
Description:
MOSFET N-CH 30V 180A TO263-7
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB180N03S4L01ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90091,Price reference "real-time change" China/Hongkong。 IPB180N03S4L01ATMA1 package/specs, Download IPB180N03S4L01ATMA1、Datasheet。