MOSFET N-CH 650V 11.4A TO263-3 IPB65R310CFDATMA2
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Description:
MOSFET N-CH 650V 11.4A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB65R310CFDATMA2(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory52021,Price reference "real-time change" China/Hongkong。 IPB65R310CFDATMA2 package/specs, Download IPB65R310CFDATMA2、Datasheet。