MOSFET N-CH 650V 11.4A TO220-3 IPP65R310CFDAAKSA1
The pictures are for reference only
Description:
MOSFET N-CH 650V 11.4A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, CoolMOS™
Not applicable to new design
DataSheet
IPP65R310CFDAAKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11718,Price reference "real-time change" China/Hongkong。 IPP65R310CFDAAKSA1 package/specs, Download IPP65R310CFDAAKSA1、Datasheet。