MOSFET N-CH 650V 10.9A THIN-PAK IPL65R340CFDAUMA1
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Description:
MOSFET N-CH 650V 10.9A THIN-PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPL65R340CFDAUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50576,Price reference "real-time change" China/Hongkong。 IPL65R340CFDAUMA1 package/specs, Download IPL65R340CFDAUMA1、Datasheet。