MOSFET N-CH 60V 120A TO262-3 IPI032N06N3GAKSA1
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Description:
MOSFET N-CH 60V 120A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI032N06N3GAKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17806,Price reference "real-time change" China/Hongkong。 IPI032N06N3GAKSA1 package/specs, Download IPI032N06N3GAKSA1、Datasheet。