MOSFET N-CH 100V 160A TO263-7 IPB039N10N3GE8187ATMA1
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Model:
IPB039N10N3GE8187ATMA1
Description:
MOSFET N-CH 100V 160A TO263-7
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB039N10N3GE8187ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory40386,Price reference "real-time change" China/Hongkong。 IPB039N10N3GE8187ATMA1 package/specs, Download IPB039N10N3GE8187ATMA1、Datasheet。