MOSFET N-CH 100V 120A D2PAK IPB120N10S403ATMA1
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Description:
MOSFET N-CH 100V 120A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, OptiMOS™
DataSheet
IPB120N10S403ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74366,Price reference "real-time change" China/Hongkong。 IPB120N10S403ATMA1 package/specs, Download IPB120N10S403ATMA1、Datasheet。