TRENCH >=100V IPB026N10NF2SATMA1
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Description:
TRENCH >=100V
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB026N10NF2SATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory69953,Price reference "real-time change" China/Hongkong。 IPB026N10NF2SATMA1 package/specs, Download IPB026N10NF2SATMA1、Datasheet。