IPI90R500C3XKSA2 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPI90R500C3XKSA2

Description:

MOSFET N-CH 900V 11A TO262-3

Stock:

59032

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.53

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Parameters

Current at 25 ° C - continuous drain (Id)

11A(Tc)

Drain source voltage (Vdss)

900 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

68 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1700 pF @ 100 V

On resistance (maximum) for different Ids and Vgs

500 mΩ @ 6.6A,10V

Power dissipation (maximum)

156W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3.5V @ 740µA

packing

pipe

series

CoolMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TO262-3-1

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载IPI90R500C3XKSA2.pdf

IPI90R500C3XKSA2（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59032,Price reference "real-time change" China/Hongkong。 IPI90R500C3XKSA2 package/specs, Download IPI90R500C3XKSA2、Datasheet。