MOSFET N-CH 80V 80A TO262-3 IPI80N08S406AKSA1
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Description:
MOSFET N-CH 80V 80A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, OptiMOS™
Not applicable to new design
DataSheet
IPI80N08S406AKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28612,Price reference "real-time change" China/Hongkong。 IPI80N08S406AKSA1 package/specs, Download IPI80N08S406AKSA1、Datasheet。