MOSFET N-CH 650V 17.5A D2PAK IPB65R190CFDAATMA1
The pictures are for reference only
Description:
MOSFET N-CH 650V 17.5A D2PAK
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, CoolMOS™
DataSheet
IPB65R190CFDAATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory52031,Price reference "real-time change" China/Hongkong。 IPB65R190CFDAATMA1 package/specs, Download IPB65R190CFDAATMA1、Datasheet。