MOSFET N-CH 80V 120A TO262-3 IPI120N08S403AKSA1
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Description:
MOSFET N-CH 80V 120A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, OptiMOS™
Not applicable to new design
DataSheet
IPI120N08S403AKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10134,Price reference "real-time change" China/Hongkong。 IPI120N08S403AKSA1 package/specs, Download IPI120N08S403AKSA1、Datasheet。