MOSFET N-CH 650V 22.4A D2PAK IPB65R150CFDAATMA1
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Description:
MOSFET N-CH 650V 22.4A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, CoolMOS™
DataSheet
IPB65R150CFDAATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13914,Price reference "real-time change" China/Hongkong。 IPB65R150CFDAATMA1 package/specs, Download IPB65R150CFDAATMA1、Datasheet。