IPI200N25N3GAKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPI200N25N3GAKSA1

Description:

MOSFET N-CH 250V 64A TO262-3

Stock:

41437

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.62

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

64A(Tc)

Drain source voltage (Vdss)

250 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

86 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

7100 pF @ 100 V

On resistance (maximum) for different Ids and Vgs

20 mΩ @ 64A,10V

Power dissipation (maximum)

300W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 270µA

packing

bulk,pipe

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO262-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

Not applicable to new design

DataSheet

下载IPI200N25N3GAKSA1.pdf

IPI200N25N3GAKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41437,Price reference "real-time change" China/Hongkong。 IPI200N25N3GAKSA1 package/specs, Download IPI200N25N3GAKSA1、Datasheet。