MOSFET N-CH 600V 18A TO252-3 IPD60R180P7SE8228AUMA1
The pictures are for reference only
Model:
IPD60R180P7SE8228AUMA1
Description:
MOSFET N-CH 600V 18A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD60R180P7SE8228AUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31348,Price reference "real-time change" China/Hongkong。 IPD60R180P7SE8228AUMA1 package/specs, Download IPD60R180P7SE8228AUMA1、Datasheet。