MOSFET N-CH 40V 80A TO263-3 IPB80N04S306ATMA1
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Description:
MOSFET N-CH 40V 80A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPB80N04S306ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44814,Price reference "real-time change" China/Hongkong。 IPB80N04S306ATMA1 package/specs, Download IPB80N04S306ATMA1、Datasheet。