MOSFET N-CH 900V 2.1A TO252-3 IPD90R1K2C3ATMA2
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Description:
MOSFET N-CH 900V 2.1A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD90R1K2C3ATMA2(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72565,Price reference "real-time change" China/Hongkong。 IPD90R1K2C3ATMA2 package/specs, Download IPD90R1K2C3ATMA2、Datasheet。