25V, N-CH MOSFET, LOGIC LEVEL, P ISZ0901NLSATMA1
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Description:
25V, N-CH MOSFET, LOGIC LEVEL, P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ISZ0901NLSATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26367,Price reference "real-time change" China/Hongkong。 ISZ0901NLSATMA1 package/specs, Download ISZ0901NLSATMA1、Datasheet。