MOSFET N-CH 30V 19A/40A TSDSON BSZ0909LSATMA1
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Description:
MOSFET N-CH 30V 19A/40A TSDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSZ0909LSATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory61949,Price reference "real-time change" China/Hongkong。 BSZ0909LSATMA1 package/specs, Download BSZ0909LSATMA1、Datasheet。