MOSFET P-CH 30V 8A 8SO SI4435DYTR
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Description:
MOSFET P-CH 30V 8A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SI4435DYTR(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5258,Price reference "real-time change" China/Hongkong。 SI4435DYTR package/specs, Download SI4435DYTR、Datasheet。