MOSFET N-CH 30V 8.3A 8SO IRF7807D2TR
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Description:
MOSFET N-CH 30V 8.3A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF7807D2TR(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory61194,Price reference "real-time change" China/Hongkong。 IRF7807D2TR package/specs, Download IRF7807D2TR、Datasheet。