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MOSFET N-CH 100V 17A DPAK IRLR3410TRR

IRLR3410TRR image
The pictures are for reference only
Brand:
Model:
IRLR3410TRR
Description:
MOSFET N-CH 100V 17A DPAK
Stock:
77070
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    17A(Tc)
  • Drain source voltage (Vdss)
    100 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    34 nC @ 5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    800 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    105 mΩ @ 10A,10V
  • Power dissipation (maximum)
    79W(Tc)
  • Vgs (max)
    ±16V
  • Vgs (th) (maximum) for different Ids
    2V @ 250µA
  • packing
    TR
  • series
    HEXFET®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    D-Pak
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
  • PDFicoDataSheet
    IRLR3410TRR(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77070,Price reference "real-time change" China/Hongkong。 IRLR3410TRR package/specs, Download IRLR3410TRR、Datasheet。
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