IRLR3410TRR parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRLR3410TRR

Description:

MOSFET N-CH 100V 17A DPAK

Stock:

77070

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

17A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

34 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

800 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

105 mΩ @ 10A,10V

Power dissipation (maximum)

79W(Tc)

Vgs (max)

±16V

Vgs (th) (maximum) for different Ids

2V @ 250µA

packing

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

D-Pak

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRLR3410TRR（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77070,Price reference "real-time change" China/Hongkong。 IRLR3410TRR package/specs, Download IRLR3410TRR、Datasheet。