MOSFET N-CH 100V 21A TO263-3 SPB21N10
The pictures are for reference only
Description:
MOSFET N-CH 100V 21A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPB21N10(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74712,Price reference "real-time change" China/Hongkong。 SPB21N10 package/specs, Download SPB21N10、Datasheet。