MOSFET N-CH 560V 4.5A TO252-3 SPD04N50C3BTMA1
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Description:
MOSFET N-CH 560V 4.5A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPD04N50C3BTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51567,Price reference "real-time change" China/Hongkong。 SPD04N50C3BTMA1 package/specs, Download SPD04N50C3BTMA1、Datasheet。