MOSFET N-CH 560V 7.6A TO252-3 SPD08N50C3BTMA1
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Description:
MOSFET N-CH 560V 7.6A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPD08N50C3BTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83413,Price reference "real-time change" China/Hongkong。 SPD08N50C3BTMA1 package/specs, Download SPD08N50C3BTMA1、Datasheet。